50 nm CD Lines Etched on SiO2

 

 

 

EBL100 Settings:

 

EHT: 80kV

Beam Current: 20 pA

VRU: 4

Dose Range: 1500 uC/cm2 – 2500 uC/cm2

 

Designed line width (L-Edit): 20 nm

Obtained line width (SEM): 50 nm

 

Resist: Microchem PMMA C4 (300 nm)

 

Substrate: Silicon

Oxide: SiO2 Thermal  (100nm thickness)

 

Comments: Comments: PMMA C4: Coating 6000rpm 60 secs, Bake 180C 15mins Develop: 1MIBK : 3 IPA, 35 secs. No hardbake required. Oxide etched in Oxford Plasmalab 80 (recipe: smallox.prc).