50nm Metal Lift-Off Lines (AuPd on Si)

	EBL100 Settings: EHT: 80kV Beam Current: 10 pA VRU: 4 Dose Range: 1500 uC/cm^2 – 1800 uC/cm^2 Designed line width (L-Edit): 20 nm Obtained line width (SEM): 50 nm Field Size = 102.4 um Resist: Microchem PMMA C2 (80 nm) Substrate: Silicon Metal: AuPd (20nm thickness)
Comments: PMMA C2: Coating 6000rpm 60 secs, Bake 180C 15mins. Develop: 1MIBK : 3 IPA, 35 secs. Overnight lift-off with sample in Acetone at room temperature.