80 nm Holes Etched on Aluminum

	EBL100 Settings: EHT: 80kV Beam Current: 40 pA VRU: 4 Dose Range: 1500 uC/cm2 – 3000 uC/cm2 Designed line width (L-Edit): 100 nm Obtained line width (SEM): 80 nm Resist: Microchem PMMA C4 (300 nm) Substrate: Silicon Metal: Al (100nm thickness)
Comments: PMMA C4: Coating 6000rpm 60 secs, Bake 180C 15mins Develop: 1MIBK : 3 IPA, 35 secs. No hardbake required. Unaxis Cl2 etcher, 20 secs fast Al etch recipe (debaal.prc). 80 nm holes obtained at a dose of 1500 uC/cm2, hole diameter increases with the dose.