Grid 50nm CD on UVN-30 Negative Resist

 

 

 

 

 

EBL100 Settings:

 

EHT: 80kV

Beam Current: 5 pA

VRU: 4

Dose Range: 8 uC/cm2 – 30 uC/cm2

 

Designed line width (L-Edit): 20 nm

Obtained line width (SEM): 50 nm

 

Resist: Shipley’s UVN-30

 

Substrate: Silicon

 

 

Comments: HMDS prime. Spin 7000 rpm 60 secs. Bake 90 C 60 sec. Post Exposure Bake 95 C 60 sec. Developer Megaposit MF CD-26 30 secs. The pattern can be transferred to oxide, polysilicon, or aluminum by dry etching.