Plasma-enhanced chemical vapor deposition (PECVD) is a chemical vapor deposition process used to deposit thin films from a gas state (vapor) to a solid state on a substrate. Chemical reactions are involved in the process, which occur after creation of a plasma of the reacting gases. The plasma is generally created by radio frequency (RF) (alternating current (AC)) frequency or direct current (DC) discharge between two electrodes, the space between which is filled with the reacting gases.

The Unaxis 790 Series Plasma Enhanced Chemical Vapor Deposition (PECVD) system is used for the deposition of SiO2 & Silicon Nitride on Silicon and other wafers. The 790 Series systems are designed to provide plasma scientists with a flexible and cost effective platform for parallel plate processes. The PECVD system is computer based for wafer processing and control of all gasses, timing, and RF power applications. The top electrode is RF powered and the substrate is temperature controlled by means of an embedded resistance heater.