A 6 inch diameter parallel plate reactive ion etch system, the Plasma Therm is configured with a load lock capable of handling 4 inch wafers. The microprocessor control allows the user to select from eight etch gases including chlorine based gases for III – V and compound semiconductor etching.

Metal and photoresist are not allowed in the system.

Characteristics:

Chlorine based gases: Cl2, BCl3, SiCl4, CHF3, HBr
Load locked sample introduction
Up to 4 inch wafer capability
Turbomolecular pumping
Microprocessor control

Features:

10 – 1000 mT processing pressure
Incident power or voltage control
Substrate temperature uniformity
Variable gas chemistry