The RTP-600xp is a rapid thermal processing system dedicating for III-V ohmic contact annealing only, which uses high-intensity visible radiation to heat a single wafer (2” to 6” and smaller pieces) for a short time at precisely controlled temperatures (400 to 700oC). All III-V wafers are required to use specific susceptor during the annealing processes.

Temperature may be controlled and monitored by either a thermocouple (at low temperatures of 400-600°C) or a pyrometer (at higher temperatures of 600-700°C). If higher temperature is required for your process, please contact Staff. Please do not run higher temperature without staff’s approval. (We can check the process from the RTP computer and camera in lab).